British develops compact high value resistors for nanoscale quantum circuits

Scientists at the Nanotechnology Research Center in London, UK, report in the Journal of Applied Physics that they have developed compact high-value resistors for nanoscale quantum circuits that are expected to drive quantum computing devices and fundamental physics research. development of.

An example of a need to apply to high value resistors is the quantum phase-slip circuit. The quantum phase slip circuit is made of narrow wires made of superconducting materials. It overcomes the insurmountable energy barrier in classical physics by using a basic, counterintuitive quantum mechanical property, the quantum tunneling effect. Move the magnetic flux back and forth in the wire. In 2006, scientists at the Keweili Institute of Nanoscience in the Netherlands proposed that quantum phase slip circuits can be used in the new unit of the new definition of current, Ampere. The current amperometric measurement technology continues the macroscopic measurement methods used in the 19th century. Measurement accuracy is limited. Other scientific teams have also suggested that quantum phase slip devices can be used as quantum bits in quantum computers.

Paul Warburton, an experimenter at the Nanotechnology Research Center in London, focusing on the electronic properties of nanodevices, said that resistors are needed to isolate the fragile quantum states of quantum phase slip devices from the noisy classic world, ensuring stable operation of the device. . However, standard materials used to fabricate integrated circuit resistors typically do not meet the requirements for miniaturized, high-resistance resistors required for quantum phase slip circuits. Therefore, Warburton and his colleagues turned to the use of compound chromium oxide to develop this compact high-value nano-resistance. According to a report by the physicist organization network on December 9, they used a sputter deposition technique to create a chromium oxide film. By controlling the oxygen content in the film, the resistance of the chromium oxide film can be adjusted: the higher the oxygen content, the larger the resistance value.

The researchers cooled the nanosheet resistors to 4.2 degrees Kelvin (minus 268.95 degrees Celsius) and measured the resistivity at various oxygen-chromium mass ratios. Materials with poor conductivity, such as this chromium oxide film, generally have higher resistance at low temperatures, and the resistors used in quantum phase slip devices must also operate at sufficiently low temperatures to ensure quantum effects The "victory" classic effect works. In the chromium oxide film with the highest oxygen content, the researchers measured resistance values ​​high enough to meet the compatibility requirements of most quantum phase slip circuits.

They also measured the contact resistance of a chromium oxide film at a germanium-silicon interface. The fabrication of quantum phase slip circuits with germanium-silicon nanowires is one way to define new amperometric standards. The team found that adding a layer of gold between chromium oxide and germanium-silicon reduces contact resistance, which is a favorable result. Next they plan to integrate this new resistor into the quantum phase slip device.

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